Western Digital annucnia le sue prime memorie UFS 3.0: velocità raddoppiata!

Giuseppe Tripodi

Insieme a 5G, un’ottima buzzword per questo 2019 potrebbe essere UFS 3.0: annunciato circa un anno fa, questo nuovo standard per le memorie porterà velocità doppie rispetto a quanto siamo abituati a vedere sugli attuali smartphone. Il primo dispositivo con UFS 3.0 ad essere annunciato è stato il tanto discusso Galaxy Fold; i rumor precedenti al lancio suggerivano che anche Galaxy S10 potesse adottare memorie col nuovo standard, ma Samsung non ha specificato nulla in merito.

Ma non solo Samsung produrrà unità flash basate su UFS 3.0: Western Digital, infatti, ha appena annunciato le sue UFS 3.0 EFD (Embedded Flash Drive) , chiamate iNAND MC EU511.

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Secondo quanto riportato dal comunicato stampa  (che trovate in fondo, in inglese), queste memorie dovrebbero garantire velocità di scrittura fino a 750 MB/s, consentendo di trasferire un film di 2 ore (da 4,5 GB) in soli 3,6 secondi.

Come si può intuire dall’immagine di copertina, Western Digital ha coinvolto anche l’immancabile 5G nella comunicazione relativa alle nuove memorie flash, evidenziando come lo standard UFS 3.0 sarà fondamentale per sostenere una velocità di scrittura adeguata alla velocità di download delle reti di prossima generazione.

Western Digital’s UFS 3.0 EFD Empowers 5G Mobility

Turbo Sequential Write Speed and High Capacities Maximize User Experience in the 5G Era

SAN JOSE, Calif.- Western Digital Corp. (NASDAQ: WDC) is enriching smartphone users’ mobile experience in the 5G era with a new embedded flash drive (EFD) that provides the speed and capacity necessary to maximize the capabilities of ultra-high-end smartphones and mobile devices. Built on the company’s advanced 96-layer 3D NAND, the iNAND® MC EU511 supports Universal Flash Storage (UFS) 3.0 Gear 4/2 Lane specifications. The advanced iNAND SmartSLC Generation 6 propels turbo sequential write speeds up to 750MB/s*, enabling a 2-hour movie download in only 3.6 seconds1.

The 5G standard promises ultra-fast transfer speeds, low latency, lower power consumption and high network capacities for all mobile and edge devices. These capabilities necessitate the high-speed data interfaces, such as UFS 3.0, transforming not only smartphones but billions of interconnected Internet of Things (IoT) devices.

“Smartphones are increasingly becoming the hub of all things connected,” said Oded Sagee, senior director, Devices, Western Digital. “High speed 5G networks are set to deliver data at up to 100X the speed of previous generations and amplify AI on many devices. Artificial Intelligence (AI) powered by integrated neural processing units (NPU) with access to big and fast data will transform how we use our smartphones. Real-time computing on the edge will be in such high demand that high standards of data capturing and accessing are fundamental. With our UFS 3.0 embedded flash drive, we are enabling users to experience the new power of 5G applications, on-demand, seamlessly and instantaneously.”

Powered by the higher performance of a UFS 3.0 flash interface, 5G mobile devices will provide greater performance and lower latency for applications such as augmented reality, virtual reality (AR/VR) and mobile gaming. Additionally, high network speeds will enable consumers to quickly download and view ultra-high-resolution photos and 4K/8K media on mobile devices.

Ready for 5G devices with iNAND® MC EU511 EFD

The iNAND MC EU511 leads the industry with turbo sequential write speed up to 750MB/s and sequential read speed that is nearly double its predecessor. With increased random read/write performance and capacities ranging from 64GB to 512GB, iNAND MC EU511 is ready to empower mobile devices for the coming 5G revolution. Western Digital is currently sampling the iNAND MC EU511 EFD solutions with OEMs. For more information, visit the website: Western Digital.